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Authors: Gabriel Ferro, Maher Soueidan, Olivier Kim-Hak, Jacques Dazord, François Cauwet, Bilal Nsouli
Abstract:We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on Si face 6H-SiC substrates, on-axis and 3.5°...
195
Authors: Maher Soueidan, Olivier Kim-Hak, Gabriel Ferro, Nada Habka, Bilal Nsouli
Abstract:The growth kinetics of 3C-SiC heteroepitaxial layers on α-SiC substrates by Vapour-Liquid-Solid (VLS) mechanism in Ge-Si melts was...
199
Authors: Olivier Kim-Hak, Maher Soueidan, Gabriel Ferro, Olivier Dezellus, Ariadne Andreadou, Davy Carole, Efstathios K. Polychroniadis, Jean Claude Viala
Abstract:Twin-free 3C-SiC layers were recently obtained by Vapour-Liquid-Solid mechanism on a a-SiC(0001) substrate using Si-Ge melt. The formation of...
203
Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Yvon Cordier
Abstract:We discuss the influence of the growth conditions (composition of the gaseous phase, growth duration, growth temperature) and wafer...
207
Authors: Andrea Severino, Christopher L. Frewin, Ruggero Anzalone, Corrado Bongiorno, Patrick Fiorenza, Giuseppe D'Arrigo, Filippo Giannazzo, Gaetano Foti, Francesco La Via, Stephen E. Saddow
Abstract:In this work a comparison between atmospheric pressure (AP) and low pressure (LP) carbonization as the first step in the growth process of...
211
Authors: Andrea Severino, Corrado Bongiorno, Ruggero Anzalone, Giuseppe Abbondanza, Marco Mauceri, Giuseppe Condorelli, Gaetano Foti, Francesco La Via
Abstract:This study refers, through different microscopies, about the carbonization effects on differently oriented Si surfaces. A statistical study...
215
Authors: Byeung C. Kim, Michael A. Capano
Abstract:Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(001) substrates. 3C-SiC was grown by...
219
Authors: Günter Wagner, J. Schwarzkopf, M. Schmidbauer, R. Fornari
Abstract:3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the...
223
Authors: Yoshimine Kato, Kazuo Sakumoto
Abstract:SiC growth on as-received and striated Si(001) substrates was studied. SiC films were grown by pulsed-jet chemical vapor deposition using...
227
Authors: Marc Portail, M. Nemoz, Marcin Zielinski, Thierry Chassagne
Abstract:The structural and morphological modifications induced by the carbonization stage upon 3C-SiC heteroepitaxial films grown on (111) and (100)...
231
Showing 51 to 60 of 330 Paper Titles