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Silicon Carbide and Related Materials 2007

Materials Science Forum Volumes 600 - 603

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• p369 Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films   [ 174 K ]
  Authors: Kenneth A. Jones
• p373 Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition   [ 385 K ]
  Authors: Masashi Kato, Kazuya Ogawa, Masaya Ichimura
• p377 Investigation of Pits Formed at Oxidation on 4H-SiC   [ 1 M ]
  Authors: Yuki Nakano, T. Nakamura, A. Kamisawa, H. Takasu
• p381 Intrinsic Defects in HPSI 6H-SiC: an EPR Study   [ 195 K ]
  Authors: Patrick Carlsson, Nguyen Tien Son, Björn Magnusson, Anne Henry, Erik Janzén
• p385 Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC   [ 163 K ]
  Authors: Mary Ellen Zvanut, G. Ngetich, H.J. Chung, A.Y. Polyakov, Marek Skowronski, N.Y. Garces, E.R. Glaser
• p389 Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates   [ 612 K ]
  Authors: N.Y. Garces, E.R. Glaser, W.E. Carlos, Mark A. Fanton
• p393 Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy   [ 228 K ]
  Authors: Miyuki Takahashi, Hideharu Matsuura
• p397 The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC   [ 222 K ]
  Authors: Andreas Gällström, Björn Magnusson, Aurelie Thuaire, Plamen PASKOV, Anne Henry, Erik Janzén
• p401 Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates   [ 225 K ]
  Authors: Nguyen Tien Son, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Erik Janzén
• p405 Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material   [ 611 K ]
  Authors: S. Hahn, Franziska Christine Beyer, Andreas Gällström, Patrick Carlsson, Anne Henry, Björn Magnusson, J.R. Niklas, Erik Janzén
• p409 Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC   [ 211 K ]
  Authors: T. Umeda, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Junichi Isoya
• p413 New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC   [ 1 M ]
  Authors: Adam Gali, T. Hornos, Nguyen Tien Son, Erik Janzén
• p417 Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy   [ 196 K ]
  Authors: Sergey A. Reshanov, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shigeomi Hishiki, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
• p421 Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC   [ 198 K ]
  Authors: Giovanni Alfieri, Tsunenobu Kimoto
• p425 Carrier Removal in Electron Irradiated 4H and 6H SiC   [ 158 K ]
  Authors: Mads Mikelsen, Ulrike Grossner, Jan H. Bleka, Edouard V. Monakhov, Bengt G. Svensson, Rositza Yakimova, Anne Henry, Erik Janzén, Alexander A. Lebedev