Paper Title
Page
Authors: M. Bockstedte, A. Marini, Adam Gali, Oleg Pankratov, A. Rubio
Abstract:Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect...
285
Authors: Charíya Virojanadara, M. Hetzel, Leif I. Johansson, Wolfgang J. Choyke, Ulrich Starke
Abstract:The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy...
291
Authors: Yi Chen, Xian Rong Huang, Govindhan Dhanaraj, Michael Dudley, Edward K. Sanchez, Mike F. MacMillan
Abstract:Grazing-incidence synchrotron topography studies of micropipes (MPs) and closed-core threading screw dislocations (TSDs) have been carried...
297
Authors: Yi Chen, Ning Zhang, Xian Rong Huang, David R. Black, Michael Dudley
Abstract:The density and sense distribution of elementary threading screw dislocations in a physical vapor transport grown 3-inch 4H silicon carbide...
301
Authors: Isaho Kamata, Masahiro Nagano, Hidekazu Tsuchida, Yi Chen, Michael Dudley
Abstract:Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of...
305
Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita
Abstract:4H-SiC substrate wafers with epi-layers were observed using monochromatic synchrotron X-ray topography in grazing incidence geometries, to...
309
Authors: Hirotaka Yamaguchi, Hirofumi Matsuhata, Ichiro Nagai
Abstract:We have investigated dislocation image of 4H-SiC wafers projected on synchrotron X-ray topographs taken under different positions in the...
313
Authors: Robert E. Stahlbush, Brenda L. VanMil, Kendrick X. Liu, Kok Keong Lew, Rachael L. Myers-Ward, D. Kurt Gaskill, Charles R. Eddy, X. Zhang, Marek Skowronski
Abstract:The evolution of basal plane dislocations (BPDs) in 4H-SiC epitaxy during its growth is investigated by using two types of interrupted...
317
Authors: Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichiro Nagai, Toshiyuki Ohno, Ryouji Kosugi, Akimasa Kinoshita
Abstract:Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography in...
321
Authors: Toshiyuki Ohno
Abstract:Slip of basal plane dislocations in 4H-SiC epitaxy is observed by synchrotron reflection X-ray topography. It is verified that average slip...
325
Showing 71 to 80 of 330 Paper Titles