Paper Title:
Nanoindentation of Silicon
  Abstract

The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

  Info
Periodical
Materials Science Forum (Volumes 604-605)
Edited by
Marcello Cabibbo and Stefano Spigarelli
Pages
29-36
DOI
10.4028/www.scientific.net/MSF.604-605.29
Citation
P. M. Nagy, P. Horváth, G. Pető, E. Kálmán, "Nanoindentation of Silicon", Materials Science Forum, Vols. 604-605, pp. 29-36, 2009
Online since
October 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Li Chang, Liang Chi Zhang
Abstract:This paper investigates the “pop-in” behavior of monocrystalline silicon under nanoindentation with a Berkovich indenter. The indentation...
453
Authors: Reza A. Mirshams, Ashish K. Srivastava
Chapter 2: Metals Materials and Building Materials
Abstract:This paper presents the results of an experimental investigation on the effects of orientation and grain size on nanoindentation measurements...
143
Authors: Peter Burik, Ladislav Pešek, Lukáš Voleský
II. Mechanics of Contact
Abstract:Mechanical properties by depth sensing indentation are derived from the indentation load-displacement data used a micromechanical model...
81