Paper Title:
Positron Beam Study of Co Doped ZnO Films Prepared by PLD
  Abstract

Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400°C, 600°C, 700°C on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples.

  Info
Periodical
Edited by
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Pages
102-104
DOI
10.4028/www.scientific.net/MSF.607.102
Citation
H. F. Ren, H. M. Weng, B. J. Ye, R. D. Han, H. Li, C. B. Gao, "Positron Beam Study of Co Doped ZnO Films Prepared by PLD", Materials Science Forum, Vol. 607, pp. 102-104, 2009
Online since
November 2008
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$32.00
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