Paper Title:
Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy
  Abstract

Positron annihilation lifetime (PAL) spectroscopy,photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

  Info
Periodical
Edited by
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Pages
134-136
DOI
10.4028/www.scientific.net/MSF.607.134
Citation
Y.J. Zhang, A.H. Deng, Y. W. Zhao, J. Yu, X.X. Yu, X. Cheng, Y.L. Zhou, J.J. Long, "Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy", Materials Science Forum, Vol. 607, pp. 134-136, 2009
Online since
November 2008
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