Paper Title:
Defect Study of As-Grown Single Crystal ZnO by Positron
  Abstract

ositron lifetime spectroscopy (PAS) and Coincidence Doppler broadening measurements have been performed in as-grown and annealing single crystal ZnO. The temperature dependence observed in annealed ZnO indicates that the defect is removed during annealing. By combining the Doppler broadening measurements, we infer that there isn′t hydrogen filling the zinc vacancy site in the as-grown ZnO due to the same characteristics in CDB for as-grown and annealed ZnO samples

  Info
Periodical
Edited by
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Pages
143-145
DOI
10.4028/www.scientific.net/MSF.607.143
Citation
J. Y. Ke, H. Li, J. B. Pang, Y. Q. Dai, Z. Wang, Y. W. Zhao, "Defect Study of As-Grown Single Crystal ZnO by Positron", Materials Science Forum, Vol. 607, pp. 143-145, 2009
Online since
November 2008
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