Paper Title:
Defects in Carbon Allotropes Studied by Positron Annihilation
  Abstract

Slow positron beam technique has been employed to study the defects of graphite, nanophase C, as well as the structural changes in un-doped, B-doped and S-doped diamond films with annealing temperatures. The results show that the concentration of defects in nanophase C is higher than that in graphite. The vacancy concentration in the S-doped diamond film is higher than that in un-doped one. The addition of small amount of B atoms leads to the decrease of the vacancy concentration in the film. The vacancy concentration in un-doped diamond film would decrease after annealing at temperature below 600°C, while vacancy concentration will increase after annealing at temperatures above 900°C. The vacancy concentration in the 40 Ω cm B-doped diamond film decreases at annealing temperatures higher than 200°C.

  Info
Periodical
Edited by
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Pages
149-151
DOI
10.4028/www.scientific.net/MSF.607.149
Citation
Y. Y. Huang, Z. Y. Chen, Y. Q. Wei, Y. X. Li, W. Deng, "Defects in Carbon Allotropes Studied by Positron Annihilation", Materials Science Forum, Vol. 607, pp. 149-151, 2009
Online since
November 2008
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