Paper Title:
Influence of Sintering Temperature on Defects in Porous Silica Monoliths Studied by Positron Annihilation Techniques
  Abstract

Positron lifetime and coincidence Doppler broadening spectra for porous silica calcined at temperatures from 900 to 1500 oC have been measured. As the sintering temperatures increasing from 900 to 1000 oC, the height of the peaks of the ratio curves decrease, and the τ3 increases, which is due to the exclusion of the gas and the organic substance out of the cavities. As the sintering temperatures increasing from 1000 to 1250 oC, some of the defects were recovered, the grains of low quarts appearing and growing. This gives rise to the increase of the height of the peak of the ratio curve, and the decrease of lifetime (τ1,τ2 and τ3). As the sintering temperatures increasing from 1250 to 1500oC, the height of the peak of the ratio curve decreases, and the lifetime increases due to the phase transition of low quartz to cristobalite.

  Info
Periodical
Edited by
S. J. Wang, Z. Q. Chen, B. Wang and Y. C. Jean
Pages
204-206
DOI
10.4028/www.scientific.net/MSF.607.204
Citation
Y. Y. Huang, C. Xiong, Y. X. Wang, Y. Q. Lu, W. Deng, "Influence of Sintering Temperature on Defects in Porous Silica Monoliths Studied by Positron Annihilation Techniques", Materials Science Forum, Vol. 607, pp. 204-206, 2009
Online since
November 2008
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Mahuya Chakrabarti, S. Chattopadhyay, D. Sanyal, A. Sarkar, D. Jana
Abstract:Positron annihilation technique is a well known technique to characterize the defects in a material. These defects can be identified by...
1
Authors: Jana Veterníková, Simo Kilpeläinen, M. Skarba, Filip Tuomisto, Vladimir Slugeň, Jarmila Degmová, Veronika Sabelová, Stanislav Sojak
Chapter 9: Nuclear Materials
Abstract:This paper is focused on investigation of oxide-dispersion strengthened steels in a basic state (before an experimental treatment) by two...
278
Authors: Tie Zhu Yang, Qi Tao Zhu, Juan Juan Wei, Zhi Qiang Zhang, Rui Rui Zhang, Shu Sheng Meng, Shuai Zhou
Chapter 2: Smart and Functional Materials and Technologies, Analysis, Design, Processing
Abstract:The behavior of 3d-shell electrons in ZnO-based varistors doped with semiconductor additives has been investigated. The 3d-shell electron...
168
Authors: Tie Zhu Yang, Qi Tao Zhu, Juan Juan Wei, Zhi Qiang Zhang, Rui Rui Zhang, Shu Sheng Meng, Xiu Zhen Wang
Chapter 7: Power Electronics and Circuits, Electrical Machines and Equipments
Abstract:Coincidence Doppler broadening spectra measurements on ZnO-based varistor doped with semiconductor additives have been investigated, and the...
834