Paper Title:
Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions
  Abstract

An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.

  Info
Periodical
Edited by
N.Gabouze
Pages
123-127
DOI
10.4028/www.scientific.net/MSF.609.123
Citation
J. Rusnák, M. Ružinský, K. Imamura, T. Matsumoto, M. Štefečka, M. Takahashi, H. Kobayashi, E. Pinčík, "Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions", Materials Science Forum, Vol. 609, pp. 123-127, 2009
Online since
January 2009
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