Paper Title:
Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions
  Abstract

Experimental analysis of current –voltage and capacitance-voltage characteristics of n-ZnO/p-Si (100) heterostructures were presented. Undoped and In-doped ZnO films were deposited by the simple ultrasonic spray method on p-Si substrates (100) at varied substrate temperatures from 200 to 400°C. The structural and optical properties of ZnO films were investigated using X-ray diffraction (XRD) and transmission spectra respectively. The electrical conductivity is calculated from transport measurement in a two probes coplanar structure. It is found that the doped ZnO: In films have higher (002) diffraction peak than undoped ZnO. All films exhibit a high transparency about 85%. The maximum conductivity is observed at 350°C for doped films but increases with substrate temperature for undoped ones. Current–voltage (I-V) characteristics of all n-ZnO/p-Si heterojunctions exhibit non linear characteristics with a small current leakage in the reverse voltage. The obtained device shows a barrier height in the order of 0.65 eV, this is consistent with the theoretical value 0.67eV. The capacitance increases with increasing reverse bias in an approximately linear 1/C2-V relationship.

  Info
Periodical
Edited by
N.Gabouze
Pages
133-137
DOI
10.4028/www.scientific.net/MSF.609.133
Citation
N. Zebbar, M.S. Aida, A.E.K. Hafdallah, O. Daranfad, H. Lekiket, M. Kechouane, "Properties of ZnO Thin Films Grown on Si Substrates by Ultrasonic Spray and ZnO/Si Heterojunctions ", Materials Science Forum, Vol. 609, pp. 133-137, 2009
Online since
January 2009
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