Porous silicon is largely studied in the field of photonics because of its interesting optical properties. In this work we present an experimental study about the elaboration of a multilayer structure by photoelectrochemical etching. p-Si(100) with resistivity of 100 Ωcm is used in this work. Two different current densities were used namely 150 mA/cm2 and 10 mA/cm2. We found that the anodization time is a crucial parameter for the formation of multilayer structures. The times of 2 and 5 seconds appears as optimal times for the elaboration of multilayer structures with 16 layers. Finally, we have determined that these structures exhibit strong luminescence at 600 nm.