Paper Title:
Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application
  Abstract

We investigate the application of porous silicon (PS) in the field of the photovoltaic. In first step we realise a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer onto a low cost substrate. During high temperature onto hydrogenation treatments of to passivate the structure and epitaxy in liquid phase, porous silicon is recristallized partially. In this work, a characterization by scanning electron microscopy informs us about the morphology of these porous layers.

  Info
Periodical
Edited by
N.Gabouze
Pages
269-273
DOI
10.4028/www.scientific.net/MSF.609.269
Citation
A. Ould-Abbas, M. Madani, N.E. Chabane Sari, "Morphological Characterization of Sacrificial Layers of Porous Silicon for Photovoltaic Application", Materials Science Forum, Vol. 609, pp. 269-273, 2009
Online since
January 2009
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