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Sm1-xNdxNiO3 Thin Films Deposition by KrF Laser Ablation

Journal Materials Science Forum (Volume 609)
Volume Thin Films and Porous Materials
Edited by N.Gabouze
Pages 27-31
DOI 10.4028/www.scientific.net/MSF.609.27
Citation Slimane Lafane et al., 2009, Materials Science Forum, 609, 27
Online since January, 2009
Authors Slimane Lafane, Tahar Kerdja, Samira Abdelli-Messaci, S. Malek, M. Maaza
Keywords Metal-Insulator Transition, Pulsed Laser Deposition, Sm1-xNdxNiO3
Abstract

The perovskites RNiO3 (R rare earth ≠ La) are classified as a phase transition metal-insulator. The transition temperature is modulated by the size of the rare earth. The use of compound R1-xR'xNiO3 can vary transition temperature on a wide thermal range depending on the concentration of the two rare earths. The Sm1-xNdxNiO3 (x = 0.45) thin layers have been carried out on (100) silicon substrates by KrF laser ablation (λ = 248 nm, 25ns) at two different fluences 2 and 3 Jcm-2. The oxygen pressure and the target-substrate distance have been maintained at 0.2 mbar and 4 cm respectively. The deposition temperature has been set at 500 ° C. The obtained layers were characterized by X-ray diffraction, atomic force microscopy and Rutherford back scattering diagnostics. The resistivity Measurements were carried out by the conventional four-probe method. The XRD spectra revealed the presence of an ideal cubic perovskite phase. The RBS analysis showed that the deposited layers are rich in oxygen. A correlation between the morphology properties of the deposited layers and the plasma dynamics studied by fast imaging has been found.

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