Paper Title:
Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices
  Abstract

Low-temperature plasma deposition of diamond-like carbon (DLC) and gallium nitride thin-films grown on Si substrate by PECVD was investigated using atomic force microscopy and reflectance spectra for photovoltaic devices application. It was found that the morphological features of the GaN film depend on the substrates under the optimum deposition conditions. The optical band gap of the films was approximately 5.5eV for PECVD DLC and approximately 3.3 eV for PECVD GaN.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
353-356
DOI
10.4028/www.scientific.net/MSF.610-613.353
Citation
J. S. Yuan, M. Y. Wang, G. H. Yu, "Low-Temperature Plasma Deposition of Diamond-Like Carbon and III Nitride Thin-Films for Photovoltaic Devices", Materials Science Forum, Vols. 610-613, pp. 353-356, 2009
Online since
January 2009
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Chapter 8: Micro/Nano Materials
Abstract:The effects of nano-diamond seeds on the performance of diamond-like carbon (DLC) films were investigated. In this study, the high uniform...
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