Paper Title:
The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity
  Abstract

Boron-doped nanocrystalline silicon film was prepared through plasma enhanced chemical vapor deposition (PECVD) on silicon substrate and glass substrate under the high deposition pressure (332.5-399Pa) and the high deposition temperature (320-360°C). The film was investigated by Raman, electron probe microanalyser, conductivity and mobility experimenting techniques. The conductivity of the boron-doped nanocrystalline silicon film was 2.97×102Ω-1cm-1. The results showed that the interface between the film and the silicon substrate might have quantum spot and small size effect, causing the increasing of conductivity.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
367-371
DOI
10.4028/www.scientific.net/MSF.610-613.367
Citation
H. Liu, W. J. Zhang, S. L. Jia, W. Guo, J. Wu, "The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity", Materials Science Forum, Vols. 610-613, pp. 367-371, 2009
Online since
January 2009
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Price
$32.00
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