Paper Title:
Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles
  Abstract

SiGe alloy composite material including TiN nanoparticle were prepared. The TiN nanoparticles as the inert scattering center were fabricated by Nitrogen plasma-metal reaction. The sintered samples were characterized by electrical resistivity and seebeck coefficient measurement. Adding nanophase inclusion into the SiGe alloy matrix, the Seebeck coefficient increased, the electrical conductivity decreased and the electrical power factor only slightly reduced.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
399-402
DOI
10.4028/www.scientific.net/MSF.610-613.399
Citation
Z. Wang, H. Chen, Y. Chu, Y. Cheng, L. Zhu, X. Y. Jian, H. J. Yu, "Thermoelectric Properties P-Type Si-20 at % Ge by Addition of TiN Nanoparticles ", Materials Science Forum, Vols. 610-613, pp. 399-402, 2009
Online since
January 2009
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$32.00
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