Paper Title:
Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD
  Abstract

The GaN film deposited on ITO glass substrate by PECVD was characterized using XPS, SEM and reflectance spectra. XPS analysis indicated that the chemical status of the film surface was predominated in mixture phase of GaN and Ga2O3. It was observed that Tthe film annealed at 400°C exhibited platelet-shaped and hexagonal structure and c-plane textured morphology from SEM images. The reflectance spectra show that the absorption cutoff wavelength of the sample annealed at 400 °C was broadened to 1100nm roughly. From the results, Iit is concluded that the GaN film grown on ITO glass substrate by PECVD will be a promising full spectra material.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
446-449
DOI
10.4028/www.scientific.net/MSF.610-613.446
Citation
J. S. Yuan, G. H. Yu, C. M. Yang, M. Y. Wang, "Deposition and Characterization of GaN Films on ITO Glass Substrates by PECVD", Materials Science Forum, Vols. 610-613, pp. 446-449, 2009
Online since
January 2009
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$32.00
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