Paper Title:
Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films
  Abstract

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
598-603
DOI
10.4028/www.scientific.net/MSF.610-613.598
Citation
L. Zhao, Z. X. Lu, C. J. Cheng, D. G. Zhao, J. J. Zhu, B. J. Sun, B. Qu, X. F. Zhang, W. G. Sun, "Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films", Materials Science Forum, Vols. 610-613, pp. 598-603, 2009
Online since
January 2009
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$32.00
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