Paper Title:
Fabrication and Properties of Large-Area Silicon Nanowire Arrays
  Abstract

Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 °C) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
604-609
DOI
10.4028/www.scientific.net/MSF.610-613.604
Citation
H. Fang, Y. Wu, J. Zhu, "Fabrication and Properties of Large-Area Silicon Nanowire Arrays", Materials Science Forum, Vols. 610-613, pp. 604-609, 2009
Online since
January 2009
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$32.00
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