Paper Title:
Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition
  Abstract

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.

  Info
Periodical
Materials Science Forum (Volumes 610-613)
Main Theme
Edited by
Zhongwei Gu, Yafang Han, Fusheng Pan, Xitao Wang, Duan Weng and Shaoxiong Zhou
Pages
635-640
DOI
10.4028/www.scientific.net/MSF.610-613.635
Citation
G. D. Sun, H. J. Li, S. Y. Zhang, Q. G. Fu, W. Cao, Y. Q. Jiao, "Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition", Materials Science Forum, Vols. 610-613, pp. 635-640, 2009
Online since
January 2009
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Price
$32.00
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