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Silicon Carbide and Related Materials 2008

Materials Science Forum Volumes 615 - 617

• Papers
• Abstracts

• p-4 Preface   [ 8 K ]
• p-3 Committees   [ 8 K ]
• p-1 Sponsor   [ 6 K ]
• p0 Overview   [ 7 K ]
• p3 Defect Status in SiC Manufacturing   [ 917 K ]
  Authors: Elif Berkman, R.T. Leonard, Michael J. Paisley, Y. Khlebnikov, Michael J. O'Loughlin, Albert A. Burk, Adrian R. Powell, D.P. Malta, E. Deyneka, M.F. Brady, I. Khlebnikov, Valeri F. Tsvetkov, H.McD. Hobgood, Joseph J. Sumakeris, C. Basceri, Vijay Balakrishna, Calvin H. Carter Jr., C. Balkas
• p7 Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) Method   [ 551 K ]
  Authors: Jung Woo Choi, Chang Hyun Son, Jong Mun Choi, Gi Sub Lee, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku
• p11 Germanium Incorporation during PVT Bulk Growth of Silicon Carbide   [ 2 M ]
  Authors: Philip Hens, Ulrike Künecke, Katja Konias, Rainer Hock, Peter J. Wellmann
• p15 Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method   [ 1 M ]
  Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka-Dzietko, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek
• p19 Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside   [ 2 M ]
  Authors: Katarzyna Racka-Dzietko, Emil Tymicki, Marcin Raczkiewicz, Krzysztof Grasza, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Rafał Jakieła, Andrzej Brzozowski, Mariusz Pawłowski, Miroslaw Piersa, J. Sadło, Jerzy Krupka
• p23 In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction   [ 1 M ]
  Authors: Peter J. Wellmann, Katja Konias, Philip Hens, Rainer Hock, Andreas Magerl
• p27 Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method   [ 2 M ]
  Authors: Kazuaki Seki, Ryo Tanaka, Toru Ujihara, Yoshikazu Takeda
• p31 Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase   [ 3 M ]
  Authors: Didier Chaussende, Jessica Eid, Frederic Mercier, Roland Madar, Michel Pons
• p37 High Temperature Solution Growth on Free-Standing (001) 3C-SiC Epilayers   [ 1 M ]
  Authors: Ryo Tanaka, Kazuaki Seki, Toru Ujihara, Yoshikazu Takeda
• p41 Top Seeded Solution Growth of 3C-SiC Single Crystals   [ 827 K ]
  Authors: Frederic Mercier, Didier Chaussende, Jean Marc Dedulle, Michel Pons, Roland Madar
• p45 Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT   [ 480 K ]
  Authors: Jessica Eid, Irina G. Galben-Sandulache, Georgios Zoulis, Teddy Robert, Didier Chaussende, Sandrine Juillaguet, Antoine Tiberj, Jean Camassel