Paper Title:
Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth
  Abstract

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
113-116
DOI
10.4028/www.scientific.net/MSF.615-617.113
Citation
K. Kojima, H. Okumura, K. Arai, "Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth", Materials Science Forum, Vols. 615-617, pp. 113-116, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: A.K. Semennikov, S.Yu. Karpov, M.S. Ramm, A.E. Romanov, Yuri N. Makarov
383
Authors: Kentaro Tamura, Masayuki Sasaki, Chiaki Kudou, Tamotsu Yamashita, Hideki Sako, Hirokuni Asamizu, Sachiko Ito, Kazutoshi Kojima, Makoto Kitabatake
Chapter II: Fundamental and Characterization of SiC
Abstract:On 4H-SiC Si-face substrates after H2 etching, the defect with “line” feature parallel to a step as “bunched-step line” was...
367