Paper Title:
On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications
  Abstract

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H-SiC substrates. Special attention was paid to the surface preparation before starting the growth. Si-face polished surfaces were studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions. In-situ surface preparation, starting growth parameters and growth temperature are found to play a vital role to maintain the polytype stability in the epilayer. High quality epilayers with 100% 4H-SiC were obtained on full 2” wafer. Complete PiN structure was grown and more than 70% of the diodes showed a stable behavior and the forward voltage drift was less than 0.1 V. Also, a comparison of the electroluminescence images of diodes before and after heavy injection of 125 A/cm2 for 30 min did not show any sign of stacking fault formation in the device active region.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
133-136
DOI
10.4028/www.scientific.net/MSF.615-617.133
Citation
J. ul Hassan, P. Bergman, A. Henry, P. Brosselard, P. Godignon, E. Janzén, "On-Axis Homoepitaxy on Full 2” 4H-SiC Wafer for High Power Applications", Materials Science Forum, Vols. 615-617, pp. 133-136, 2009
Online since
March 2009
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$32.00
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