Paper Title:
LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application
  Abstract

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
141-144
DOI
10.4028/www.scientific.net/MSF.615-617.141
Citation
R. Hattori, K. Kamei, K. Kusunoki, N. Yashiro, S. Shimosaki, "LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application", Materials Science Forum, Vols. 615-617, pp. 141-144, 2009
Online since
March 2009
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Price
$32.00
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