Paper Title:
Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si
  Abstract

The choice of off-axis (111) Si substrates is poorly reported in literature despite of the ability of such an oriented Si substrate in the reduction of stacking faults generation and propagation. The introduction of off-axis surface would be relevant for the suppression of incoherent boundaries. We grew 3C-SiC films on (111) Si substrates with a miscut angle from 3° to 6° along <110> and <11 >. The film quality was proved to be high by X-Ray diffraction (XRD) characterization. Transmission electron microscopy was performed to give an evaluation of the stacking fault density while pole figures were conducted to detect microtwins. Good quality single crystal 3C-SiC films were finally grown on 6 inch off-axis (111)Si substrate. The generated stress on both 2 and 6 inch 3C-SiC wafers has been analyzed and discussed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
149-152
DOI
10.4028/www.scientific.net/MSF.615-617.149
Citation
A. Severino, R. Anzalone, C. Bongiorno, M. Italia, G. Abbondanza, M. Camarda, L.M.S. Perdicaro, G. Condorelli, M. Mauceri, F. La Via, "Towards Large Area (111)3C-SiC Films Grown on Off-Oriented (111)Si", Materials Science Forum, Vols. 615-617, pp. 149-152, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hiroyuki Shimizu, Yutaka Doshida, Satoshi Tanaka, Keizo Uematsu
Abstract:Recently, we have developed crystal-oriented sheet forming (COSF) process from green sheet process and high-magnetic-field method. We formed...
21
Authors: Gabriel Civrac, Farah Laariedh, Nicolas Thierry-Jebali, Mihai Lazar, Dominique Planson, Pierre Brosselard, Jawad Ul Hassan, Anne Henry, Erik Janzén, Bertrand Vergne, Sigo Scharnholz
Chapter 6: SiC Devices, Circuits and Systems
Abstract:This paper reports the fabrication and electrical characterization of PiN diodes on an on-axis grown epitaxial layer. TCAD simulations have...
969
Authors: Wei Zhang, Mei Ling Yuan, Xian Yang Wang, Jun Ouyang
Chapter 6: Optical/Electronic/Magnetic Materials
Abstract:BaTiO3 (BTO) thin films were grown on (100) SrTiO3 (STO) single crystal substrates using the RF-magnetron sputtering...
926
Authors: Ai Isohashi, Yasuhisa Sano, Tomohisa Kato, Kazuto Yamauchi
Chapter III: Processing of SiC
Abstract:Catalyst-referred etching (CARE) is a planarization method based on the chemical etching reaction, which does not need abrasives. In this...
537