Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method |
| Journal |
Materials Science Forum (Volumes 615 - 617) |
| Volume |
Silicon Carbide and Related Materials 2008 |
| Edited by |
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages |
15-18 |
| DOI |
10.4028/www.scientific.net/MSF.615-617.15 |
| Online since |
March, 2009 |
| Authors |
Emil Tymicki,
Krzysztof Grasza,
Katarzyna Racka-Dzietko,
Marcin Raczkiewicz,
Tadeusz Łukasiewicz,
Maciej Gała,
Kinga Kościewicz,
Ryszard Diduszko,
Rafał Bożek
|
| Keywords |
4H-SiC, 6H-SiC Seed, Crystal Growth, Hexagonal Voids, Open Backside, PVT |
| Abstract |
4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC seeds. The influence of the seed temperature, form and granulation of SiC source materials on the stability and efficiency of the 4H polytype growth have been investigated. A new way of the seed mounting - with an open backside - has been used. Crystals obtained were free of structural defects in the form of hexagonal voids. The crystalline structure of SiC crystals was investigated by EBSD (Electron Backscatter Diffraction) and X-Ray diffraction methods. Moreover, defects in crystals and wafers cut from these crystals were examined by optical, scanning electron and atomic force microscopy combined with KOH etching. |
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