Paper Title:
Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method
  Abstract

4H-SiC single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on 6H-SiC seeds. The influence of the seed temperature, form and granulation of SiC source materials on the stability and efficiency of the 4H polytype growth have been investigated. A new way of the seed mounting - with an open backside - has been used. Crystals obtained were free of structural defects in the form of hexagonal voids. The crystalline structure of SiC crystals was investigated by EBSD (Electron Backscatter Diffraction) and X-Ray diffraction methods. Moreover, defects in crystals and wafers cut from these crystals were examined by optical, scanning electron and atomic force microscopy combined with KOH etching.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
15-18
DOI
10.4028/www.scientific.net/MSF.615-617.15
Citation
E. Tymicki, K. Grasza, K. Racka, M. Raczkiewicz, T. Łukasiewicz, M. Gała, K. Kościewicz, R. Diduszko, R. Bożek, "Growth of 4H-SiC Single Crystals on 6H-SiC Seeds with an Open Backside by PVT Method", Materials Science Forum, Vols. 615-617, pp. 15-18, 2009
Online since
March 2009
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Price
$32.00
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