Paper Title:
A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios
  Abstract

A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined of observations using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) indicates that the C:Si ratio is critical in determining the grain size and at values of C:Si close to 1 texturing and faceting become evident. Makyoh Topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
153-156
DOI
10.4028/www.scientific.net/MSF.615-617.153
Citation
G. Attolini, B. E. Watts, M. Bosi, F. Rossi, F. Riesz, "A Comparative Study of the Morphology of 3C-SiC Grown at Different C/Si Ratios", Materials Science Forum, Vols. 615-617, pp. 153-156, 2009
Online since
March 2009
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Price
$32.00
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