Paper Title:
Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer
  Abstract

A novel method for growing highly-crystalline 3C-SiC on an oxide release layer via a poly-Si seed layer is reported. Silicon carbide’s potential role as a ubiquitous material for MEMS fabrication lies in its dual role as an electronic and mechanical material. Unfortunately, due to residual stresses and crystal defects stemming from the large lattice constant mismatch and the thermal expansion coefficient difference between SiC and Si, the use of SiC in Si-based MEMS fabrication techniques has been very limited. The growth of 3C-SiC on a poly-Si seed layer deposited on oxide on (111)Si substrates (i.e., p-Si/ SiO2/(111)Si) provides an alternative fabrication method to expensive, traditional SOI bonding techniques for producing free-standing 3C-SiC MEMS structures. 3C-SiC grown with a poly-Si seed layer on SiO2 should experience reduced residual stress and far fewer defects due to the compliance of the SiO2 layer. Although poly-Si is utilized as a seed layer in this process, a well-ordered monocrystalline 3C-SiC layer was achieved and the process and film properties reported.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
157-160
DOI
10.4028/www.scientific.net/MSF.615-617.157
Citation
C. Locke, C. L. Frewin, J. Wang, S. E. Saddow, "Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer", Materials Science Forum, Vols. 615-617, pp. 157-160, 2009
Online since
March 2009
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Price
$32.00
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