Paper Title:
Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
  Abstract

We analyze in detail the evolution of curvature of 3C-SiC layers grown on vicinal silicon substrates. A common feature of (100) and (111) oriented layers is a strongly asymmetric wafer bending that may suggest an anisotropic stress relaxation within the layer. A comparative study of the curvature, lattice parameter, surface morphology and structural defects for the off-angles ranging from 0.5° to 6° is performed in order to confirm or disprove this hypothesis. We find a homogeneous, tensile in-plane lattice deformation. We also show the correlation of the orientation of the high and low curvature axes with the morphology and defect pattern of the layer.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
169-172
DOI
10.4028/www.scientific.net/MSF.615-617.169
Citation
M. Zielinski, M. Portail, S. Roy, S. Kret, T. Chassagne, M. Nemoz, Y. Cordier, "Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon", Materials Science Forum, Vols. 615-617, pp. 169-172, 2009
Online since
March 2009
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$32.00
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