Paper Title:
Structural Properties of 3C-SiC Grown by Sublimation Epitaxy
  Abstract

The present paper deals with morphological and structural investigation of 3C-SiC layers grown by sublimation epitaxy on on axis 6H-SiC(0001) at source temperature 2000 °C, under vacuum conditions (<10-5 mbar) and different temperature gradients in the range of 5-8 °C/mm. The layer grown at a temperature gradient 6 °C/mm has the largest average domain size of 0.4 mm2 assessed by optical microscope in transmission mode. The rocking curve full width at half maximum (FWHM) of (111) reflection is 43 arcsec which suggests good crystalline quality. The AFM image of the same layer shows steps with height 0.25 nm and 0.75 nm which are characteristic of a stacking fault free 3C-SiC surface and c-axis repeat height, respectively.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
181-184
DOI
10.4028/www.scientific.net/MSF.615-617.181
Citation
M. Beshkova, M. Syväjärvi, R. Vasiliauskas, J. Birch, R. Yakimova, "Structural Properties of 3C-SiC Grown by Sublimation Epitaxy", Materials Science Forum, Vols. 615-617, pp. 181-184, 2009
Online since
March 2009
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Price
$32.00
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