Paper Title:
Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates
  Abstract

The use of Ge very rich Si-Ge liquid phase during the heteroepitaxial growth of 3C-SiC on Si-face, on-axis 6H-SiC(0001) substrate by vapour-liquid-solid mechanism leads to the formation of Ge based precipitates inside the 3C layer. These Ge based features are investigated by TEM and atomic models of the Ge clustering are proposed by means of high resolution TEM image simulation. Conventional TEM shows only a few small precipitates sparsely distributed near the interface, as well as dislocations and stacking faults starting from the interface in an almost regular manner. High resolution TEM shows fine structural imperfections in the form of Guinier Preston zones also near the interface. It is concluded that the high Ge content creates an enlargement of the SiC lattice leading to a misfit with the substrate. This could be the driving force for the formation of all the observed features.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
185-188
DOI
10.4028/www.scientific.net/MSF.615-617.185
Citation
M. Marinova, I. Tsiaousis, N. Frangis, E. K. Polychroniadis, O. Kim-Hak, J. Lorenzzi, G. Ferro, "Searching for Ge Clusters inside 3C-SiC Layers Grown by Vapor-Liquid-Solid Mechanism on 6H-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 185-188, 2009
Online since
March 2009
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Price
$32.00
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