Paper Title:
Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside
  Abstract

n- and p-type 6H-SiC single crystals grown by PVT method using different charge materials – poly-SiC sinter or fresh SiC powder – have been studied. An open or closed seed backside during the growth processes have been applied. In the former, a distinct decrease backside etching of the seed was observed. Crystals have been extensively characterized with respect to their purity, quality and electrical properties using complex experimental methods. For the n-type boule an axially and radially homogeneous resistivity ~0.11 cm at 300 K was observed. Electrical properties of the p-type crystal, i.e., high room-temperature resistivity of 239 cm, were affected by compensation effects between residual donors (nitrogen and oxygen) and acceptors (mainly boron).

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
19-22
DOI
10.4028/www.scientific.net/MSF.615-617.19
Citation
K. Racka, E. Tymicki, M. Raczkiewicz, K. Grasza, M. Kozubal, E. Jurkiewicz-Wegner, R. Jakieła, A. Brzozowski, M. Pawłowski, M. Piersa, J. Sadło, J. Krupka, "Characterization of 6H-SiC Single Crystals Grown by PVT Method Using Different Source Materials and Open or Closed Seed Backside", Materials Science Forum, Vols. 615-617, pp. 19-22, 2009
Online since
March 2009
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$32.00
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