Paper Title:
Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase
  Abstract

Like on 6H-SiC substrates, 3C-SiC islands precipitation was found to be the initial stage of the VLS growth of 3C-SiC layers on 4H-SiC surfaces. This precipitation happens between 1100 and 1200°C with a heating rate of 2.8°C.s-1, without addition of propane. The islands size increases in a similar manner whether the final temperature increases (for a given heating rate) or the heating rate decreases (for a given final temperature). This enlargement can give rise to a complete cubic layer for the highest temperatures or the slowest heating rates. It is suggested that the carbon atoms involved in the enlargement process (after the nucleation) come from the graphite crucible.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
193-196
DOI
10.4028/www.scientific.net/MSF.615-617.193
Citation
O. Kim-Hak, G. Ferro, J. Dazord , P. Chaudouët, D. Chaussende, "Effects of Temperature and Heating Rate on the Precipitation of 3C-SiC Islands on 4H-SiC(0001) from a Liquid Phase", Materials Science Forum, Vols. 615-617, pp. 193-196, 2009
Online since
March 2009
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$32.00
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