Paper Title:
Growth of Graphene Layers on Silicon Carbide
  Abstract

The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
199-202
DOI
10.4028/www.scientific.net/MSF.615-617.199
Citation
W. Strupiński, R. Bożek, J. Borysiuk, K. Kościewicz, A. Wysmolek, R. Stepniewski, J. M. Baranowski, "Growth of Graphene Layers on Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 199-202, 2009
Online since
March 2009
Keywords
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Price
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