Paper Title:
Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates
  Abstract

We report a comparative investigation of few layers graphene grown on 6H, 4H and 3C-SiC substrates. We show that the size of the graphitic domains depends more on the <0001> SiC surface orientation than the polytypism.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
203-206
DOI
10.4028/www.scientific.net/MSF.615-617.203
Citation
N. Camara, J. R. Huntzinger, A. Tiberj, G. Rius, B. Jouault, F. Pérez-Murano, N. Mestres, P. Godignon, J. Camassel, "Growth of Few Graphene Layers on 6H, 4H and 3C-SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 203-206, 2009
Online since
March 2009
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Price
$32.00
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