Paper Title:
Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)
  Abstract

The structural and electronic properties of epitaxial graphene on SiC(0001) are investigated by low energy electron diffraction (LEED) and angle resolved ultraviolet photoelectron spectroscopy (ARUPS). Fingerprints in the spot intensity spectra in LEED allow for the exact determination of the number of layers for the first three graphene layers after being correlated with the electronic bandstructure obtained from ARUPS using He II excitation. Our analysis includes the consideration of samples with different doping levels. A possible influence of the polytype 4H- or 6H-SiC is discussed. LEED by itself turns out to be an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001).

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
219-222
DOI
10.4028/www.scientific.net/MSF.615-617.219
Citation
C. Riedl, U. Starke, "Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)", Materials Science Forum, Vols. 615-617, pp. 219-222, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Evgenia V. Kalinina, G. Kholuyanov, G. Onushkin, D.V. Davydov, Anatoly M. Strel'chuk, Andrey O. Konstantinov, Anders Hallén, V.A. Skuratov, Andrej Yu. Kuznetsov
Abstract:The influence of the irradiation with neutrons, Kr+ (245 MeV) and Bi+ (710 MeV) ions on the optical and electrical properties of...
377
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Zhen Zhu, Jin Ma, Cai Na Luan, Fan Yang, Ling Yi Kong
Abstract:SnO2 thin films have been deposited on 6H-SiC(0001) substrates by metalorganic chemical vapor deposition (MOCVD) system. The structural and...
1539
Authors: Ameer Al-Temimy, Christian Riedl, Ulrich Starke
Abstract:By carbon evaporation under ultrahigh vacuum (UHV) conditions, epitaxial graphene can be grown on SiC(0001) at significantly lower...
593
Authors: Christian Riedl, Camilla Coletti, Takayuki Iwasaki, Ulrich Starke
Abstract:In this report we review how intrinsic drawbacks of epitaxial graphene on SiC(0001) such as n-doping and strong electronic influence of the...
623