Paper Title:
Investigation of Graphene Growth on 4H-SiC
  Abstract

This paper reports the investigation of epitaxial graphene growth on 4H-SiC substrates. Growth has been performed under ultra high vacuum (UHV) conditions at temperatures ranging from 1150 to 1250°C, and the formation of the graphene layer has been monitored using X-ray photoelectron spectroscopy (XPS). A gradient of 100°C in temperature was introduced across the sample in order to grow a wide range of thicknesses along the sample. Atomic force microscopy (AFM) of the surface shows that the epitaxial graphene layer follows the topography of the bulk material and introduces very little surface roughness. This paper also reports the electrical characterisation of the graphene layers.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
223-226
DOI
10.4028/www.scientific.net/MSF.615-617.223
Citation
A. Castaing, O. J. Guy, M. Lodzinski, S.P. Wilks, "Investigation of Graphene Growth on 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 223-226, 2009
Online since
March 2009
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Price
$32.00
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