Paper Title:
Study of the Electrical Characteristics of the CNT/SiC Interface
  Abstract

Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
231-234
DOI
10.4028/www.scientific.net/MSF.615-617.231
Citation
M. Castellino, S. Bianco, D. Perrone, S. Musso, M. Giorcelli, G. Maccioni, S. Ferrero, L. Scaltrito, A. Tagliaferro, "Study of the Electrical Characteristics of the CNT/SiC Interface", Materials Science Forum, Vols. 615-617, pp. 231-234, 2009
Online since
March 2009
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Price
$32.00
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