Paper Title:
Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
  Abstract

This paper describes the study of non-hollow-core elementary screw dislocations (SDs) in silicon carbide (SiC) diodes using X-ray microbeam three-dimensional topography. Strain analysis shows that typical screw dislocations having a symmetric strain field tend to cause microplasma breakdown, whereas deformed SDs do not. The symmetry break in SDs will relax the focussing of strain and lessen the formation of defects, thereby leading to the desirable non-leak property.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
251-254
DOI
10.4028/www.scientific.net/MSF.615-617.251
Citation
R. Tanuma, T. Tamori, Y. Yonezawa, H. Yamaguchi, H. Matsuhata, K. Fukuda, K. Arai, "Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography", Materials Science Forum, Vols. 615-617, pp. 251-254, 2009
Online since
March 2009
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