Paper Title:
Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity
  Abstract

Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work describes the development of a PL-topography method for the determination of charge carrier distribution in p-type SiC and shows the correlation of PL-Intensity and charge carrier concentration. With this setup it is possible to characterize wafers up to a size of 2” at room- and low temperature in a non-destructive way.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
259-262
DOI
10.4028/www.scientific.net/MSF.615-617.259
Citation
F. Oehlschläger, S. Juillaguet, H. Peyre, J. Camassel, P. J. Wellmann, "Photoluminescence-Topography of the p-Type Doped SiC Wafers for Determination of Doping Inhomogeneity", Materials Science Forum, Vols. 615-617, pp. 259-262, 2009
Online since
March 2009
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Price
$32.00
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