Paper Title:
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
  Abstract

The paper presents experimental data on the temperature dependence and the excitation properties of the phosphorus-related photoluminescence in 4H SiC. Two main sets of phonon replicas can be observed with selective excitation, which are attributed to two of the no-phonon lines observed in the spectrum. Some of the excited states are also attributed to one of the no-phonon lines on the ground of the selectively excited spectra. A tentative explanation of the observed features in terms of multiple bound excitons is proposed.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
263-266
DOI
10.4028/www.scientific.net/MSF.615-617.263
Citation
I. G. Ivanov, J. ul Hassan, A. Henry, E. Janzén, "Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC", Materials Science Forum, Vols. 615-617, pp. 263-266, 2009
Online since
March 2009
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