Paper Title:
Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method
  Abstract

We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
27-30
DOI
10.4028/www.scientific.net/MSF.615-617.27
Citation
K. Seki, R. Tanaka, T. Ujihara, Y. Takeda, "Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method ", Materials Science Forum, Vols. 615-617, pp. 27-30, 2009
Online since
March 2009
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Price
$32.00
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