Polytype and Crystal Quality of SiC Crystals Grown on 3C-SiC by Seeded Solution Method |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 27-30 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.27 |
| Citation | Kazuaki Seki et al., 2009, Materials Science Forum, 615-617, 27 |
| Online since | March, 2009 |
| Authors | Kazuaki Seki, Ryo Tanaka, Toru Ujihara, Yoshikazu Takeda |
| Keywords | 3C-SiC, Polytype, Solution Growth, Stacking Fault |
| Abstract | We investigated the effects of the solution growth process on the polytype and crystal quality of the crystals grown on (111) 3C-SiC seed crystals. In spite of the use of 3C-SiC seed crystals, the polytype of the grown crystal changed from 3C-SiC to 6H-SiC, because the stacking errors easily occur due to the similarity of the (111) face of 3C-SiC and the (0001) face of 6H-SiC. Moreover, the grown 6H-SiC crystal affected the crystal quality of the seed crystal, i.e., high-density stacking faults were induced in the seed crystal after the growth process. |
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