Paper Title:
Dislocation-Induced Birefringence in Silicon Carbide
  Abstract

The dislocation-induced birefringence of Silicon Carbide (SiC) is analytically and quantitatively modelled by using the adequate SiC data. A good agreement can be obtained between theory and experiment, provided that a background residual (uniaxial) stress is added to the local dislocation-induced stress. Observations are compatible with or predictable from the Burgers vector values, so that birefringence reveals an interesting tool for probing the nature of the dislocations associated, e.g., to micropipes, also faster than and complementary to the more involved transmission electron microscopy (TEM) technique.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
271-274
DOI
10.4028/www.scientific.net/MSF.615-617.271
Citation
T. Ouisse, D. Chaussende, L. Auvray, E. Pernot, R. Madar, "Dislocation-Induced Birefringence in Silicon Carbide", Materials Science Forum, Vols. 615-617, pp. 271-274, 2009
Online since
March 2009
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Peter J. Wellmann, Ralf Müller, Michel Pons, Aurelie Thuaire, Alexandre Crisci, Michel Mermoux, Laurent Auvray
Abstract:We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly...
393
Authors: Didier Chaussende, Frédéric Mercier, Roland Madar, Michel Pons
Abstract:We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds...
71
Authors: Le Thi Mai Hoa, Thierry Ouisse, M. Seiss, Didier Chaussende
Chapter 3: Physical Properties and Characterization of SiC
Abstract:Using 6H SiC wafers including regions with a varying residual stress, the birefringence pattern of almost vertical dislocations is measured...
331
Authors: Jian Qiu Guo, Yu Yang, Fang Zhen Wu, Joseph J. Sumakeris, R.T. Leonard, O.Y. Goue, Balaji Raghothamachar, Michael Dudley
1.1 Bulk Growth
Abstract:The presence of threading mixed dislocations (TMDs) (with both edge and screw component) in 4H-SiC crystals grown by PVT method has been...
15