Paper Title:
Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
  Abstract

We have performed 2D X-ray diffraction mapping of the SiC lattice basal plane orientation over full 2” SiC substrates. Measurements of the omega angle were made in two perpendicular directions <11-20> and <1-100>, which gives the complete vectorized tilt of the basal planes. The Mapping revealed two characteristic bending behaviors on measured commercial wafers. The first is characterized by large variations in omega angle across the wafer in both crystallographic directions. The continuously changing omega angle in both directions gives the wafer an apparent rotationally symmetric bending which is concave towards the growth direction. The second characteristic behavior is seen in wafers with lower degree of omega angle variation. The variations in this type of wafers are not changing linearly, but are bending the basal planes with two-fold symmetry.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
275-278
DOI
10.4028/www.scientific.net/MSF.615-617.275
Citation
J. Palisaitis, P. Bergman, P.O.Å. Persson, "Two Dimensional X-Ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 275-278, 2009
Online since
March 2009
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$32.00
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