Paper Title:
An Effective Method of Characterization of SiC Substrates
  Abstract

An effective low-cost technique for rapid characterization of SiC ingots at the early stage of substrate manufacturing process is proposed. The method allows for revealing simultaneously open-micropipes, polytype inclusions, low grain boundary regions, and non-uniform resistivity. The idea of the method is to subject full-size single SiC wafer cut from an ingot to anodization treatment. The porous structure formed as a result of the treatment decorates existing defect regions via the effect of non-homogeneity in the porous structure caused by the defect-related internal stress, as well as by non-uniformity in the doping level across the wafer. The method is inexpensive, not time consuming and not fully destructive. It can also be combined with the standard selective KOH-etching technique.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
279-282
DOI
10.4028/www.scientific.net/MSF.615-617.279
Citation
M. G. Mynbaeva, A. A. Lebedev, "An Effective Method of Characterization of SiC Substrates", Materials Science Forum, Vols. 615-617, pp. 279-282, 2009
Online since
March 2009
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Price
$32.00
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