Paper Title:
Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers
  Abstract

The pulsed MOS-C (Metal Oxide Semiconductor-Capacitor) technique was used to measure generation lifetimes in 4H-SiC epitaxial wafers. The ratio of generation to recombination lifetime has been investigated to understand the dominant defect for generation lifetime. The EH6/7 defect level is considered to limit generation lifetime and field enhanced emission is proposed to explain extremely large variation of generation lifetime in a small area. Generation lifetime is limited by dislocations when they are above a threshold density of about 106cm-2. Generation lifetimes measured on 4 and 8 degree off-cut angle epi-substrates are very comparable.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
283-286
DOI
10.4028/www.scientific.net/MSF.615-617.283
Citation
G. Y. Chung, M. J. Loboda, M.J. Marninella, D.K. Schroder, T. Isaacs-Smith, J. R. Williams, "Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers", Materials Science Forum, Vols. 615-617, pp. 283-286, 2009
Online since
March 2009
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Price
$32.00
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