Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 291-294 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.291 |
| Citation | Amitesh Shrivastava et al., 2009, Materials Science Forum, 615-617, 291 |
| Online since | March, 2009 |
| Authors | Amitesh Shrivastava, Paul B. Klein, E.R. Glaser, Joshua D. Caldwell, A.V. Bolotnikov, Tangali S. Sudarshan |
| Keywords | 4H-SiC, Carrier Lifetime, Dichlorosilane, Epilayer, Photoluminescence (PL), Silane |
| Abstract | In this work we report the measurement of minority carrier lifetimes using the time resolved photoluminescence technique. It was found that 4H-SiC homo-epilayers grown using chlorine-based precursors have longer carrier lifetimes if used in conjunction with a tantalum carbide coated (TaC-coated) graphite susceptor rather than a SiC-coated graphite susceptor. Longer carrier lifetimes were obtained by optimal combinations of precursor gases and susceptor type. The controllable variation in lifetime from 250 ns to 9.9 s was demonstrated. |
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