Paper Title:
Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors
  Abstract

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
299-302
DOI
10.4028/www.scientific.net/MSF.615-617.299
Citation
C. J. Cochrane, P. M. Lenahan, A. J. Lelis, "Direct Observation of Lifetime Killing Defects in 4H SiC Epitaxial Layers via Spin Dependent Recombination in Transistors", Materials Science Forum, Vols. 615-617, pp. 299-302, 2009
Online since
March 2009
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