Features of Hot Hole Transport in 6Н-SiC |
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| Journal | Materials Science Forum (Volumes 615 - 617) |
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| Volume | Silicon Carbide and Related Materials 2008 |
| Edited by | Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard |
| Pages | 307-310 |
| DOI | 10.4028/www.scientific.net/MSF.615-617.307 |
| Citation | Vladimir I. Sankin et al., 2009, Materials Science Forum, 615-617, 307 |
| Online since | March, 2009 |
| Authors | Vladimir I. Sankin, Pavel P. Shkrebiy, Alla A. Lepneva, Andrey G. Ostroumov, Rositza Yakimova |
| Keywords | Carrier Scattering, Electrical Field, Wannier-Stark Localization |
| Abstract | In materials with a small degree of ionicity ranging 10-15%, such as in SiC, carrier scattering on polar optical potential is possible. Unlike scattering on deformation potential, the drift mobility in this case increases continuously. As this phenomenon may be realized in SiC hot hole transport, I-F characteristics in 6H-SiC with Na-Nd ~ 5x1017 cm-3 have been studied at electrical field 1-150 kV/cm for temperature from 300 to 600K. Furthermore, we studied the breakdown of Al impurity. |
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