Paper Title:
Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase
  Abstract

The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.

  Info
Periodical
Materials Science Forum (Volumes 615-617)
Edited by
Amador Pérez-Tomás, Philippe Godignon, Miquel Vellvehí and Pierre Brosselard
Pages
31-36
DOI
10.4028/www.scientific.net/MSF.615-617.31
Citation
D. Chaussende, J. Eid, F. Mercier, R. Madar, M. Pons, "Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase", Materials Science Forum, Vols. 615-617, pp. 31-36, 2009
Online since
March 2009
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Price
$32.00
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